Doping Profile Optimization in Semiconductor Design
نویسنده
چکیده
The doping profile optimization in semiconductor has been tackled as a constrained optimization problem coupled with a drift-diffusion model to simulate the physical phenomenon. A new population-based algorithm, the Constrained Immunological Algorithm, has been introduced and the experimental results confirm that clearly outperforms previous state-of-theart algorithms in doping profile optimization. Supplementary Materials: more numerical results are available at http://www.dmi.unict.it/∼stracquadanio/semiconductors.html.
منابع مشابه
Simulation Based Optimization Environment and It's Application to Semiconductor Devices
We present a versatile simulation based optimization environment. Arbitrary simulators can be integrated into this environment like in our case for Technology Computer Aided Design (TCAD) applications. The optimizer module is integrated in a simulation environment which performs job farming and load balancing and also extracts results from simulation data. In an example we present a doping prof...
متن کاملTrends in semiconductor laser design:
The trade-off between the effect of leakage suppression and the increase of related optical loss due to placement of the p-doping in 1.3-1.55μm InGaAsP MQW edgeemitting lasers is detailed. The effect of the Zn doping profile on laser characteristics is illustrated by experimental results obtained for telecom lasers and high power lasers. The design approach combining broadened waveguides with p...
متن کاملTowards doping optimization of semiconductor lasers
We discuss analytical and numerical methods for the optimization of optoelectronic devices by performing optimal control of the PDE governing the carrier transport with respect to the doping profile. First, we provide a cost functional that is a sum of a regularization and a contribution, which is motivated by the modal net gain that appears in optoelectronic models of bulk or quantum-well lase...
متن کاملImplementation of EIS for dopant profile analysis in n-type silicon
An experimental setup has been developed for successive photo-electrochemical etch and EIS measurement of semiconductor samples. Furthermore an algorithm based on electrochemical capacitance-voltage (ECV) has been developed for calculating dopant profile based on the measurements by developed setup. Phosphorous diffusion profile in p-type silicon was estimated by employing developed setup and a...
متن کاملAutomatic Device Design Optimization with TCAD Frameworks
A design optimization method is presented which utilizes automatic optimization capabilities within TCAD frameworks. This method is applied to doping profile optimizations of ultra-low-power CMOS transistors with 0.25 and 0.1 μm gate lengths. Two different performance goals are utilized, to maximize the drive current of an NMOS transistor and to minimize the gate delay time of a CMOS inverter s...
متن کامل